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| PD - 94052A LOGIC LEVEL HEXFET(R) POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number IRL5NJ7404 BVDSS IRL5NJ7404 20V, P-CHANNEL -20V RDS(on) 0.04 ID -11A Fifth Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. SMD-0.5 Features: n n n n n n n n n Logic Level Gate Drive Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -10V, TC = 25C ID @ VGS = -10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight -11 -7.0 -44 50 0.4 12 157 -11 5.0 0.7 -55 to 150 300 (for 5 s) 1.0 (Typical) Units A W W/C V mJ A mJ V/ns o C g For footnotes refer to the last page www.irf.com 1 8/8/01 IRL5NJ7404 Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min -20 -- -- -- -0.7 9.0 -- -- -- -- -- -- -- -- -- -- -- -- Typ Max Units -- 0.14 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 -- -- 0.04 0.07 -- -- -1.0 -25 -100 100 50 5.5 21 20 150 65 90 -- V V/C V S( ) A Test Conditions VGS = 0V, ID = -250A Reference to 25C, ID = -1.0mA VGS = -4.5V, ID = -11A VGS = -2.7V, ID = -7.0A VDS = VGS, ID = -250A VDS = -15V, IDS = -3.2A VDS = -16V ,VGS=0V VDS = -16V, VGS = 0V, TJ =125C VGS = -12V VGS = 12V VGS =-4.5V, ID = -3.2A VDS = -16V VDD = -10V, ID = -3.2A, VGS =-4.5V, RG = 6.0 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = -15V f = 1.0MHz Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 1450 830 430 -- -- -- pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units -- -- -- -- -- -- -- -- -- -- -11 -44 -1.0 80 100 Test Conditions A V ns nC Tj = 25C, IS = -3.2A, VGS = 0V Tj = 25C, IF = -3.2A, di/dt 100A/s VDD -20V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units -- -- 2.5 C/W Test Conditions Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRL5NJ7404 100 VGS TOP -7.5V -4.5V -3.5V -3.0V -2.7V - 2.0V -1.75V BOTTOM -1.5V 100 -I D, Drain-to-Source Current (A) 10 -I D, Drain-to-Source Current (A) 10 VGS -7.5V -4.5V -3.5V -3.0V -2.7V -2.0V -1.75V BOTTOM -1.5V TOP 1 1 -1.5V -1.5V 20s PULSE WIDTH Tj = 25C 0.1 0.1 1 10 100 20s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100 -V DS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 -I D , Drain-to-Source Current (A) TJ = 25 C TJ = 150 C 10 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = -11A 1.5 1.0 1 0.5 0.1 1.5 15 V DS = -15V 20s PULSE WIDTH 3.5 4.0 2.0 2.5 3.0 4.5 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRL5NJ7404 3000 2500 -VGS , Gate-to-Source Voltage (V) VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 10 ID = -3.2A 8 C, Capacitance (pF) VDS = -16V VDS = -10V VDS = -4V 2000 6 1500 4 1000 500 2 0 1 10 100 0 0 10 20 FOR TEST CIRCUIT SEE FIGURE 13 30 40 50 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY R DS(on) TJ = 150 C -ISD , Reverse Drain Current (A) 10 -I D, Drain-to-Source Current (A) TJ = 25 C 1 10 1ms 10ms Tc = 25C Tj = 150C Single Pulse 1 1 10 -V DS , Drain-toSource Voltage (V) 100 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRL5NJ7404 12 V DS 10 RD VGS RG -ID , Drain Current (A) D.U.T. + 6 VGS Pulse Width 1 s Duty Factor 0.1 % 4 Fig 10a. Switching Time Test Circuit 2 VGS td(on) tr t d(off) tf 0 25 50 75 100 125 150 10% TC , Case Temperature ( C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 1 P DM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com - 8 V DD 5 IRL5NJ7404 VDS L EAS , Single Pulse Avalanche Energy (mJ) 400 RG D .U .T IA S + D R IV E R VD D VDS A 300 ID -5.0A -7.0A BOTTOM -11A TOP VGS -20V tp 0.0 1 200 15V 100 Fig 12a. Unclamped Inductive Test Circuit IAS 0 25 50 75 100 125 150 Starting T , Junction Temperature( C) J Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K -4.5V QGS VG QG QGD -12V 12V .2F .3F VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com + D.U.T. - VDS IRL5NJ7404 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = -15 V, Starting TJ = 25C, L= 2.6mH Peak IAS = -11A, VGS =-10V, RG= 25 ISD -11A, di/dt -84 A/s, Pulse width 300 s; Duty Cycle 2% VDD -20V, TJ 150C Case Outline and Dimensions -- SMD-0.5 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 08/01 www.irf.com 7 |
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